BLF978P datasheet(3/15 Pages) AMPLEON

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BLF978P

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Product data sheet

Rev. 1 — 3 April 2020

3 of 15

BLF978P

HF / VHF power LDMOS transistor

Characteristics

(1)

 = 1 %

(2)

 = 2 %

(3)

 = 5 %

(4)

 = 10 %

(5)

 = 20 %

(6)

 = 50 %

(7)

 = 100 % (DC)

Fig 1.

Transient thermal impedance from junction to case as a function of pulse

duration

amp01281

10-7

10-6

10-5

10-4

10-3

10-2

10-1

0.04

0.08

0.12

0.16

0.2

tp (s)

Zth(j-c)

th(j-c)

Zth(j-c)

(K/W)

(7)

(6)

(5)

(4)

(3)

(2)

(1)

Table 6.

DC characteristics

Tj = 25 C; per section unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; ID = 3.94 mA

108

--V

VGS(th)

gate-source threshold voltage

VDS =10 V; ID = 394 mA

1.5

2.0

2.5

IDSS

drain leakage current

VGS =0V; VDS = 50 V

--2.8

A

IDSX

drain cut-off current

VGS =VGS(th) +3.75 V;

VDS =10 V

71.7 -

IGSS

gate leakage current

VGS =11V; VDS = 0 V

280

RDS(on)

drain-source on-state resistance VGS =VGS(th) + 3.75 V;

ID = 13.79 A

-54



Table 7.

AC characteristics

Tj = 25 C; per section unless otherwise specified.

Symbol

Parameter

Conditions

Min Typ

Max Unit

Crs

feedback capacitance

VGS =0V; VDS =50 V; f=1MHz

1.45

Ciss

input capacitance

VGS =0V; VDS =50 V; f=1MHz

392

Coss

output capacitance

VGS =0V; VDS =50 V; f=1MHz

115

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