1. Product profile

1.1 General description

A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial

applications. The excellent ruggedness of this device makes it ideal for digital and analog

transmitter applications.

[1]

Measured at

[2]

Measured [dBc] with delta marker at 4.3 MHz from center frequency.

[3]

PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.

1.2 Features and benefits



Excellent ruggedness (VSWR

 40 : 1 through all phases)





Suitable for CW UHF and ISM applications



High power gain



High efficiency



Designed for broadband operation (470 MHz to 860 MHz)



Internal input matching for high gain and optimum broadband operation



Excellent reliability



Easy power control



Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

BLF888A; BLF888AS

UHF power LDMOS transistor

Rev. 6 — 1 September 2015

Product data sheet

Table 1.

Application information

Mode of operation

f

IMD3

PAR

(MHz)

(W)

(W)

(dB)

(%)

(dBc)

(dBc)

(dB)

RF performance in a common source narrowband test circuit

CW

650

-

600

20

67

-

-

-

CW (42 V)

650

-

500

20

69

-

-

-

2-tone, class-AB

250

-

21

46

32

-

-

pulsed, class-AB [1]

860

-

600

20

58

-

-

-

DVB-T (8k OFDM)

858

110

-

21

31

-

32 [2]

8.2 [3]

858

125

-

21

32.5

-

30 [2]

8.0 [3]

RF performance in a common source 470 MHz to 860 MHz broadband test circuit

DVB-T (8k OFDM)

858

110

-

20

30

-

32 [2]

8.0 [3]

858

120

-

20

31

-

31 [2]

7.8 [3]