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3DA76 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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3DA76 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 3DA76 DESCRIPTION · High DC Current Gain- : hFE= 15(Max) @IC= 0.3A · Excellent Safe Operating Area · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use as an output device in complementary audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current-Continuous 0.5 A PC Collector Power Dissipation@TC=75℃ 7.5 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -55-175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5.0 ℃ /W |
Número de pieza similar - 3DA76 |
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Descripción similar - 3DA76 |
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