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2SC5886A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SC5886A
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC5886A Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
2SC5886A
DESCRIPTION
·
High switching speed time
·
Low collector-to-emitter saturation voltage
·
Fast switching speed
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
High-Speed Switching Applications
·
DC/DC Converter Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-peak
10
A
IB
Base Current
0.5
A
PC
Collector Power Dissipation
Ta=25℃
1.0
W
Collector Power Dissipation
TC=25℃
20
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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