SSM3K72KFS datasheet(3/9 Pages) TOSHIBA

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SSM3K72KFS

6. Electrical Characteristics

6.1. Static Characteristics (Unless otherwise specified, Ta = 25 �)

Characteristics

Gate leakage current

Drain cut-off current

Drain-source breakdown voltage

Gate threshold voltage

Drain-source on-resistance

Forward transfer admittance

(Note 1)

Symbol

IGSS

IDSS

V(BR)DSS

Vth

RDS(ON)

|Yfs|

Test Condition

VDS = 0 V, VGS = ±16 V

VDS = 60 V, VGS = 0 V

ID = 250 µA, VGS = 0 V

VDS = VGS, ID = 250 µA

ID = 100 mA, VGS = 4.5 V

ID = 100 mA, VGS = 5.0 V

ID = 100 mA, VGS = 10 V

VDS = 10 V, ID = 200 mA

Min

�

1.1

�

Typ.

�

1.2

1.15

1.05

Max

±10

�

2.1

1.75

1.65

1.5

�

Unit

µA

Ω

Note 1: Pulse measurement.

6.2. Dynamic Characteristics (Unless otherwise specified, Ta = 25 �)

Characteristics

Input capacitance

Reverse transfer capacitance

Output capacitance

Switching time (rise time)

Switching time (turn-on delay time)

Switching time (fall time)

Switching time (turn-off delay time)

Symbol

Ciss

Crss

Coss

td(on)

td(off)

Test Condition

VDS = 10 V, VGS = 0 V,

f = 1 MHz

VDD = 30 V, ID = 200 mA,

VGS = 0 to 10 V, RG = 50 Ω

Duty ≤ 1%, VIN: tr, tf < 5 ns,

Common source

Min

�

Typ.

1.3

5.5

3.6

5.5

Max

�

Unit

6.3. Switching Time Test Circuit

Fig. 6.3.1

Switching Time Test Circuit

Fig. 6.3.2

Input Waveform/Output Waveform

6.4. Gate Charge Characteristics (Unless otherwise specified, Ta = 25 �)

Characteristics

Total gate charge (gate-source plus gate-drain)

Gate-source charge

Gate-drain charge

Symbol

Qgs

Qgd

Test Condition

VDD = 30 V, ID = 200 mA,

VGS = 4.5 V

Min

�

Typ.

0.39

0.2

0.11

Max

0.6

�

Unit

2021-06-03

Rev.6.0

Toshiba Electronic Devices & Storage Corporation

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