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AS4LC2M8S0 Datasheet(PDF) 19 Page - Alliance Semiconductor Corporation

No. de pieza AS4LC2M8S0
Descripción Electrónicos  3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM
PDF  29 Pages
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Fabricante Electrónico  ALSC [Alliance Semiconductor Corporation]
Página de inicio  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4LC2M8S0 Datasheet(HTML) 19 Page - Alliance Semiconductor Corporation

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AS4LC2M8S1
AS4LC1M16S1
5/21/01; v.1.1
Alliance Semiconductor
P. 19 of 29
write interrupted by write (BL = 4)
tCCD = CAS to CAS delay (= 1 CLK).
tCDL = last address in to new column addres delay (= 1 CLK).
write interrupted by read (BL = 4)
tCCD = CAS to CAS delay (= 1 CLK).
tCDL = last address in to new column addres delay (= 1 CLK).
Interrupting RD/WR can be for either the same or different banks.
read interrupted by write (CL = 1, BL = 4)
To prevent bus contention, maintain a gap between data in and data out.
CLK
CMD
ADD
DQ
DA0
DB0
DB1
DB2
DB3
A0
B0
Write data
Write data
tCCD
tCDL
tCK
tCH
tCL
tDS
tDH
tCDL
CLK
CMD
ADD
DQ (CL1)
DQ (CL2)
DQ (CL3)
Write data
Read data
AB
DA0
QB0
QB1
QB2
QB3
DA0
QB0
QB1
QB2
QB3
DA0
QB0
QB1
QB2
QB3
tCCD
CLK
CMD1
DQM1
DQ1
CMD2
DQM2
DQ2
CMD3
DQM3
DQ3
Write data
D0
D1
D2
D3
D0
D1
D2
D3
D0
D1
D2
D3
Read data
Write data
Read data
Write data
Q1
Q0
Read data
tLZ
tHZ



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