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MF4SAM3 Datasheet(PDF) 13 Page - NXP Semiconductors |
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MF4SAM3 Datasheet(HTML) 13 Page - NXP Semiconductors |
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13 / 31 page ![]() NXP Semiconductors MF4SAM3 MIFARE SAM AV3 secure access module MF4SAM3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved. Product short data sheet Rev. 3.0 — 2 August 2019 COMPANY PUBLIC 561930 13 / 31 Symbol Parameter Conditions Min Typ Max Unit -0.3 V ≤ VI < 0 V; +30 °C < Tamb ≤ +85 °C Test conditions: VI = -0.3 V; VDD = VDD(max) of the respective supply voltage class A, B or C; Tamb = +85 °C - - -200 μA Input CLK (during IC reset) VIH2 HIGH level input voltage 0.7 VDD - VDD + 0.3 V VIL2 LOW level input voltage -0.3 - 0.25 VDD V IIH2 HIGH level input current (weak pull-up is on) 0.7 VDD ≤ VI ≤ VDD; Test conditions for the maximum absolute value: IIH2(max): VI = 0.7 VDD, VDD = VDD(max) of the respective supply voltage class A, B or C 0 - -20 μA IIL2 HIGH level input current (weak pull-up is on) 0 V ≤ VI ≤ 0.3 VDD; Test conditions for the maximum absolute value: IIL2(max): VI = 0V, VDD = VDD(max) of the respective supply voltage class A, B or C - - -20 μA II2 Input current (weak pull-up is on) 0 V ≤ VI ≤ VDD; Test conditions for the maximum absolute value: II2(max): VI = 0 V, VDD = VDD(max) of the respective supply voltage class A, B or C 0 - -20 μA IILIH2 Leakage input current at input voltage beyond VDD VDD < VI ≤ VDD + 0.3 V; -25 °C ≤ Tamb ≤ +85 °C Test conditions: VI = VDD + 0.3 V; VDD = VDD(max) of the respective supply voltage class A, B or C; Tamb = +85 °C - - 20 μA -0.3 V ≤ VI < 0 V; -25 °C ≤ Tamb ≤ +30 °C Test conditions: VI = -0.3 V; VDD = VDD(max) of the respective supply voltage class A, B or C; Tamb = +30 °C - - -50 μA IILIL2 Leakage input current at input voltage below VSS -0.3 V ≤ VI < 0 V; +30 °C < Tamb ≤ +85 °C Test conditions: VI = -0.3 V; VDD = VDD(max) of the respective supply voltage class A, B or C; Tamb = +85 °C - - -200 μA |
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