PR812BA33 datasheet(5/6 Pages) NIKOSEM

No. de pieza	PR812BA33

Descripción Electrónicos	N-Channel Enhancement Mode Field Effect Transistor

PDF	6 Pages

Scroll/Zoom	100%

Fabricante Electrónico	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Página de inicio	http://www.niko-sem.com

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5 / 6 page

REV 1.0

K-12-1

N-Channel Enhancement Mode

Field Effect Transistor

PR812BA33

PowerFET

NIKO-SEM

120

150

0.001

0.01

0.1

100

Single Pulse

θJA = 60 ˚C/W

TA = 25

˚C

single pulse

Duty cycle=0.5

0.2

0.1

0.05

0.02

0.01

0.001

0.01

0.1

0.0001

0.001

0.01

0.1

100

Notes

1.Duty cycle, D= t1 / t2

2.RthJA = 60 ℃/W

3.TJ-TA = P*RthJA(t)

4.RthJA(t) = r(t)*RthJA

Source-Drain Diode Forward Voltage

Gate charge Characteristics

Characteristics

VSD, Source-To-Drain Voltage(V)

Qg , Total Gate Charge(nC)

Single Pulse Maximum Power Dissipation

Safe Operating Area

Single Pulse Time(s)

VDS, Drain-To-Source Voltage(V)

Transient Thermal Response Curve

T1 , Square Wave Pulse Duration(s)

VDS=15V

ID=14A

0.1

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

25℃

150℃

100ms

10ms

1ms

100uS

0.01

0.1

100

1000

0.01

0.1

100

NOTE :

1.VGS = 10V

2.TA =25

˚C

3.R

θJA = 60 ˚C/W

4.Single Pulse

Operation in This

Area is Limited

by RDS(ON)

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