SS34-SS310 Family

Surface Mount Schottky Barrier Rectifier

Document Number: F41808N

06-OCT-2021 V 2.2

www.futurewafer.com.tw

1/14

1. Synopsis

1-1. General Description

These Devices Employ The Schottky Barrier Principle in a

Metal−to−Silicon Power Rectifier. Features Epitaxial

Construction With Oxide Passivation and Metal Overlay

Contact. Ideally Suited For Low Voltage, High Frequency

Switching Power Supplies; Free Wheeling Diodes and

Polarity Protection Diodes.

1-2. Feature List

●

High Surge Current Capability

●

Low Power Loss, High Efficiency

●

Highly Stable Oxide Passivated Junction

●

Low Forward Voltage Drop

1-3. Applications

●

For Use In Low Voltage High Frequency

Inverters, Freewheeling, DC/DC Converters,

and Polarity Protection Applications.

1-4. Benefits

●

Essentially No Switching Losses

●

Higher Efficiency

●

Reduction Of Heat Sink Requirements

●

Parallel Devices Without Thermal Runaway

●

Higher System Reliability Due To Lower Operating Temperatures

1-5. Mechanical Characteristics

●

Molded JEDEC Package:

- SOD-123FL

- SMAJ

- SMAF

- SMBJ

●

Packing: Tape and Reel

●

Flammability rating UL 94V-0

●

Halogen Free

●

JEDEC MSL Classification: Level 1

Cathode

Anode

SOD-123FL

SMAJ

SMAF

SMBJ