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AT25DF256 Datasheet(PDF) 9 Page - Dialog Semiconductor

No. de pieza AT25DF256
Descripción Electrónicos  256-Kbit, 1.65V Minimum SPI Serial Flash Memory with Dual-Read Support
PDF  43 Pages
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Fabricante Electrónico  DIALOG [Dialog Semiconductor]
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AT25DF256 Datasheet(HTML) 9 Page - Dialog Semiconductor

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AT25DF256
DS-25DF256–035D–2/2017
Figure 7-1. Read Array - 03h Opcode
Figure 7-2. Read Array - 0Bh Opcode
7.2
Dual-Output Read Array
The Dual-Output Read Array command is similar to the standard Read Array command and can be used to sequentially
read a continuous stream of data from the device by simply providing the clock signal once the initial starting address has
been specified. Unlike the standard Read Array command, however, the Dual-Output Read Array command allows two
bits of data to be clocked out of the device on every clock cycle, rather than just one.
The Dual-Output Read Array command can be used at any clock frequency, up to the maximum specified by fRDDO. To
perform the Dual-Output Read Array operation, the CS pin must first be asserted and then the opcode 3Bh must be
clocked into the device. After the opcode has been clocked in, the three address bytes must be clocked in to specify the
location of the first byte to read within the memory array. Following the three address bytes, a single dummy byte must
also be clocked into the device.
After the three address bytes and the dummy byte have been clocked in, additional clock cycles will result in data being
output on both the SO and SIO pins. The data is always output with the MSB of a byte first and the MSB is always output
on the SO pin. During the first clock cycle, bit seven of the first data byte is output on the SO pin, while bit six of the same
data byte is output on the SIO pin. During the next clock cycle, bits five and four of the first data byte are output on the SO
and SIO pins, respectively. The sequence continues with each byte of data being output after every four clock cycles.
When the last byte (007FFFh) of the memory array has been read, the device will continue reading from the beginning of
the array (000000h). No delays will be incurred when wrapping around from the end of the array to the beginning of the
array.Deasserting the CS pin will terminate the read operation and put the SO and SIO pins into a high-impedance state.
The CS pin can be deasserted at any time and does not require that a full byte of data be read.
SCK
CS
SI
SO
MSB
MSB
23
1
0
00000011
67
5
410 11
9
812
37 38
33
36
35
34
31 32
29 30
39 40
OPCODE
AAAA
AAA
A
A
MSB
MSB
DDDDDDD
D
D
D
ADDRESS BITS A23-A0
DATA BYTE 1
HIGH-IMPEDANCE
K
S
I
O
MSB
MSB
23
1
0
00001011
67
5
410 11
9
812
39
42 43
41
40
37 38
33
36
35
34
31 32
29 30
44
47 48
46
45
OPCODE
AAAA
AAA
A
A
MSB
XXXXXXX
X
MSB
MSB
DDDDDDD
D
D
D
ADDRESS BITS A23-A0
DON'T CARE
DATA BYTE 1
HIGH-IMPEDANCE



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