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FFH30US30DN Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza FFH30US30DN
Descripción Electrónicos  Fast Recovery Rectifier
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FFH30US30DN Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
Fast Recovery Rectifier
FFH30US30DN
FEATURES
·
Guarding for over voltage protection
·
Dual rectifier construction,positive center tap
·
Metal of silicon rectifier,majority carrier conduction
·
Low forward voltage,high efficiency
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Switching power supply
·
Rectifier in switch mode supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
300
V
IF(AV)
Average Rectified Forward Current
Per Leg
Total device
30
60
A
IFSM
Nonrepetitive Peak Surge Current
(Surge
applied
at
rated
load
conditions
half-wave, single phase, 60Hz)
325
A
PD
Maximum power dissipation
230
W
TJ
Junction Temperature
-55~175
℃
Tstg
Storage Temperature Range
-55~175
℃


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