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2SC6016 Datasheet(PDF) 2 Page - Sanyo Semicon Device

No. de pieza 2SC6016
Descripción Electrónicos  NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications
PDF  4 Pages
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Fabricante Electrónico  SANYO [Sanyo Semicon Device]
Página de inicio  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC6016 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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2SC6016
No.8559-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Gain-Bandwidth Product
fT
VCE=10V, IC=500mA
320
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
40
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=2.5A, IB=50mA
110
165
mV
IC=4A, IB=200mA
145
220
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=2.5A, IB=50mA
0.85
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10µA, IE=0A
40
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
30
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10µA, IC=0A
6
V
Turn-ON Time
ton
See specified Test Circuit.
30
ns
Storage Time
tstg
See specified Test Circuit.
320
ns
Fall Time
tf
See specified Test Circuit.
15
ns
Package Dimensions
Switching Time Test Circuit
unit : mm
7008-003
VR
RB
VCC=12V
IC=20IB1= --20IB2=2.5A
VBE= --5V
+
+
50
Ω
INPUT
OUTPUT
RL
470
µF
100
µF
PW=20
µs
IB1
D.C.
≤1%
IB2
1.5
0.5
0.4
3.0
4.5
1.6
0.4
12
3
1.5
Top View
Bottom View
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
6
8
4
7
5
2
3
1
0
8
6
2
4
7
3
5
1
0
0.2
0
0.4
0.6
0.8
1.0
0.1
0.3
0.5
0.7
0.9
IT09768
10mA
20mA
60mA
30mA
80mA
IB=0mA
5mA
VCE=2V
0
0.2
0.4
0.6
0.8
1.0
1.1
0.1
0.3
0.5
0.7
0.9
IT09769
40mA
50mA



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