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P0102AL Datasheet(PDF) 2 Page - STMicroelectronics |
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P0102AL Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() P01xxxL 2/7 Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified) Table 5: Thermal resistance Symbol Test Conditions P0102xL P0109AL Unit IGT VD = 12 V RL = 140 Ω MAX. 200 1 µA VGT MAX. 0.8 V VGD VD = VDRM RL = 3.3 kΩ RGK = 1 kΩ Tj = 125°C MIN. 0.1 V VRG IRG = 10 µA MIN. 8 V IH IT = 50 mA RGK = 1 kΩ MAX. 6 mA IL IG = 1 mA RGK = 1 kΩ MAX. 7 mA dV/dt VD = 67 % VDRM RGK = 1 kΩ Tj = 125°C MIN. 200 100 V/µs VTM ITM = 0.4 A tp = 380 µs Tj = 25°C MAX. 1.7 V Vt0 Threshold voltage Tj = 125°C MAX. 1.0 V Rd Dynamic resistance Tj = 125°C MAX. 1000 m Ω IDRM IRRM VDRM = VRRM Tj = 25°C MAX. 1 µA Tj = 125°C 100 Symbol Parameter Value Unit Rth(j-a) Junction to ambient (mounted on FR4 with recommended pad layout) 400 °C/W Figure 1: Maximum average power dissipation versus average on-state current Figure 2: Average and D.C. on-state current versus case temperature 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.22 0.24 0.26 0.28 0.30 P(W) I (A) T(AV) α = 180° 360° α 0 25 50 75 100 125 0.00 0.05 0.10 0.15 0.20 0.25 0.30 I (A) T(AV) T (°C) case α = 180° D.C. |
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