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MCP48FVB22 Datasheet(PDF) 5 Page - Microchip Technology

No. de pieza MCP48FVB22
Descripción Electrónicos  8-/10-/12-Bit Single/Dual Voltage Output Volatile Digital-to-Analog Converters with SPI Interface
PDF  84 Pages
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Fabricante Electrónico  MICROCHIP [Microchip Technology]
Página de inicio  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MCP48FVB22 Datasheet(HTML) 5 Page - Microchip Technology

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 2015 Microchip Technology Inc.
DS20005466A-page 5
MCP48FVBXX
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
Voltage on VDD with respect to VSS ......................................................................................................... -0.6V to +6.5V
Voltage on all pins with respect to VSS ............................................................................................... -0.6V to VDD+0.3V
Input clamp current, IIK (VI < 0, VI > VDD, VI > VPP on HV pins) ..........................................................................±20 mA
Output clamp current, IOK (VO < 0 or VO > VDD)...................................................................................................±20 mA
Maximum current out of VSS pin
(Single) ..........................................................................................................50 mA
(Dual)...........................................................................................................100 mA
Maximum current into VDD pin
(Single) ..........................................................................................................50 mA
(Dual)...........................................................................................................100 mA
Maximum current sourced by the VOUT pin ............................................................................................................20 mA
Maximum current sunk by the VOUT pin..................................................................................................................20 mA
Maximum current sunk by the VREF pin.................................................................................................................125 µA
Maximum input current source/sunk by SDI, SCK, and CS pins .............................................................................2 mA
Maximum output current sunk by SDO Output pin .................................................................................................25 mA
Total power dissipation (1) ....................................................................................................................................400 mW
Package power dissipation (TA = +50°C, TJ = +150°C)
MSOP-10 ..................................................................................................................................................490 mW
ESD protection on all pins
±4 kV (HBM)
±400V (MM)
 ±1.5 kV (CDM)
Latch-Up (per JEDEC JESD78A) @ +125°C .....................................................................................................±100 mA
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature with power applied ...............................................................................................-55°C to +125°C
Soldering temperature of leads (10 seconds) ....................................................................................................... +300°C
Maximum Junction Temperature (TJ).................................................................................................................... +150°C
Note 1:
Power dissipation is calculated as follows:
PDIS = VDD x {IDD -  IOH} +  {(VDD –VOH) x IOH} + (VOL x IOL)
† Notice:
Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at those or any other conditions above those indicated in the
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.



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