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*2005 年第 2 版* All Rights Reserved
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Low Frequency Power Amplifier Transistors 低频功率放大三极管
NPN Silicon (FHT8050)
FEATURES 特点
· Low Frequency Power Amplifier 低频功率放大
· Suitable for Driver Stage of Small Motor 小马达驱动
· Complementary to FHTA8550 与 FHTA8550 互补
MAXIMUM RATINGS(Ta=25℃) 最大额定值
CHARACTERISTIC 特性参数
Symbol 符号
Rating 额定值
Unit 单位
Collector-Base Voltage 集电极-基极电压
V CBO
40
Vdc
Collector-Emitter Voltage 集电极-发射极电压
V CEO
25
Vdc
Emitter-Base Voltage 发射极-基极电压
V EBO
5.0
Vdc
Collector Current—Continuous 集电极电流-连续
Ic
800
mAdc
Base Current 基极电流
IB
160
mAdc
Collector Power Dissipation 集电极耗散功率
PC
300
mW
Junction Temperature 结温
Tj
150
℃
Storage Temperature Range 储存温度
Tstg
-55～150
℃
DEVICE MARKING 打标
hFE(1) FHT8050O=7O(85～200),FHT8050Y=7Y(160～300),FHT8050G=7G(280~360)
ELECTRICAL CHARACTERISTICS 电特性
(TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃)
Characteristic 特性参数
Symbol
符号
Test Condition
测试条件
Min
最小值
TYP
典型
Max
最大值
Unit
单位
Collector Cutoff Current 集电极截止电流
ICBO
VCB=30V,IE=0
—
—
0.1
μA
Emitter Cutoff Current 发射极截止电流
IEBO
VEB=5V,IC=0
—
—
0.1
μA
Collector-Base Breakdown Voltage
集电极-基极击穿电压
V(BR)CBO
IC=100μA
40
—
—
V
Collector-Emitter Breakdown Voltage
集电极-发射极击穿电压
V(BR)CEO
IC=10mA
25
—
—
V
Emitter-Base Breakdown Voltage
发射极-基极击穿电压
V(BR)EBO
IE=100μA
5
—
—
V
DC Current Gain 直流电流增益
hFE (1)
VCE=1V,IC=100mA
85
—
360
hFE (2)
VCE=1V,IC=800mA
40
—
—
—
Collector-Emitter Saturation Voltage
集电极-发射极饱和压降
V CE(sat)
IC=500mA,IB=50mA
—
—
0.6
V
Base-Emitter Voltage 基极-发射极电压
VBE
VCE=1V,IC=10mA
—
0.8
1.0
V
Transition Frequency 特征频率
fT
VCE=5V,IC=10mA
100
120
—
MHz
Collector Output Capacitance 输出电容
Cob
VCB=10V,IE=0,f=1MHz
—
13
30
pF
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