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CTS521 Datasheet(PDF) 2 Page - Toshiba Semiconductor

No. de pieza CTS521
Descripción Electrónicos  Schottky Barrier Diode Silicon Epitaxial
PDF  5 Pages
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

CTS521 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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CTS521
2
5.
5.
5.
5. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25
))))
Characteristics
Forward voltage
Reverse current
Total capacitance
Symbol
VF(1)
VF(2)
VF(3)
IR(1)
IR(2)
Ct
Test Condition
IF = 1 mA
IF = 5 mA
IF = 200 mA
VR = 10 V
VR = 30 V
VR = 0 V, f = 1 MHz
Min
Typ.
0.20
0.24
0.45
25
Max
0.5
20
30
Unit
V
µA
pF
6.
6.
6.
6. Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig. 6.1
6.1
6.1
6.1 Marking
Marking
Marking
Marking
Marking Code
79
Part Number
CTS521
7.
7.
7.
7. Usage Considerations
Usage Considerations
Usage Considerations
Usage Considerations
•
Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs
more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both
forward and reverse power losses of SBDs should be considered for thermal and safety design.
8.
8.
8.
8. Land Pattern Dimensions for Reference Only
Land Pattern Dimensions for Reference Only
Land Pattern Dimensions for Reference Only
Land Pattern Dimensions for Reference Only
Fig.
Fig.
Fig.
Fig. 8.1
8.1
8.1
8.1 Land pattern dimensions for reference only (Unit : mm)
Land pattern dimensions for reference only (Unit : mm)
Land pattern dimensions for reference only (Unit : mm)
Land pattern dimensions for reference only (Unit : mm)
2014-04-04
Rev.3.0



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