EPC2012C datasheet(2/6 Pages) EPC-CO

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eGaN® FET DATASHEET

EPC2012C

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DS – Drain-to-Source Voltage (V)

VGS = 5 V

VGS = 4 V

VGS = 3 V

VGS = 2 V

Figure 1: Typical Output Characteristics at 25°C

VGS – Gate-to-Source Voltage (V)

250

200

100

150

2.5

3.5

4.5

D = 3 A

D = 6 A

D = 10 A

D = 15 A

Figure 3: RDS(on) vs. VGS for Various DrainCurrents

VGS – Gate-to-Source Voltage (V)

0.5

1.5

2.5

4.5

3.5

25˚C

125˚C

DS = 6 V

Figure 2: Transfer Characteristics

VGS – Gate-to-SourceVoltage(V)

150

100

200

250

2.5

3.5

4.5

ID = 3 A

25˚C

125˚C

Figure 4: RDS(on) vs. VGS for Various Temperatures

Dynamic Characteristics (TJ = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

CISS

Input Capacitance

VDS = 100 V, VGS = 0 V

100

140

CRSS

Reverse Transfer Capacitance

0.4

0.6

COSS

Output Capacitance

Gate Resistance

0.6

Total Gate Charge

VDS = 100 V, VGS = 5 V, ID = 3 A

1.3

QGS

Gate-to-Source Charge

VDS = 100 V, ID = 3 A

0.3

QGD

Gate-to-Drain Charge

0.2

0.35

QG(TH)

Gate Charge at Threshold

0.2

QOSS

Output Charge

VDS = 100 V, VGS = 0 V

QRR

Source-Drain Recovery Charge

All measurements were done with substrate connected to source.

Note 2: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS.

Note 3: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS.

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