ESDM1131 datasheet(2/7 Pages) ONSEMI

2 / 7 page

ESDM1131

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse Working Voltage

VRWM

I/O Pin to GND

3.3

Breakdown Voltage

VBR

IT = 1 mA, I/O Pin to GND

4.0

5.0

6.0

Reverse Leakage Current

VRWM = 3.3 V, I/O Pin to GND

0.1

Clamping Voltage

IPP = 4 A, (8x20 ms pulse)

5.6

Clamping Voltage

TLP (Note 1)

IPP = 8 A

IEC 61000−4−2 Level 2 equivalent

(±4 kV Contact, ±4 kV Air)

5.5

IPP = 16 A

IEC 61000−4−2 Level 2 equivalent

(±8 kV Contact, ±15 kV Air)

7.0

Junction Capacitance

VR = 0 V, f = 1 MHz

4.0

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.

TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.

ORDERING INFORMATION

Device

Package

Shipping†

ESDM1131MX4T5G

X4DFN2

(Pb−Free)

10,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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