1

Transistor

2SC5019

Silicon NPN epitaxial planer type

For UHF band low-noise amplification

q

Low noise figure NF.

q

High gain.

q

q

Mini Power type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the maga-

zine packing.

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Base

2:Collector

EIAJ:SC–62

3:Emitter

Mini Power Type Package

4.5

±0.1

3.0

±0.15

1.5

±0.1

0.4

±0.08

0.5

±0.08

1.5

±0.1

0.4

±0.04

1.6

±0.2

45

°

marking

321

Symbol

*

Ratings

15

10

2

80

1

150

–55 ~ +150

Unit

V

V

V

mA

W

˚C

˚C

Parameter

Collector cutoff current

Emitter cutoff current

Collector to base voltage

Collector to emitter voltage

Forward current transfer ratio

Transition frequency

Collector output capacitance

Foward transfer gain

Maximum unilateral power gain

Noise figure

Symbol

2

GUM

NF

Conditions

min

15

10

80

5

7.5

typ

6

0.9

10

11.5

1.7

max

1

1

250

1.2

Unit

µA

µA

V

V

GHz

pF

dB

dB

dB

thickness of 1.7mm for the collector portion

Marking symbol :

W