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LM3404 Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LM3404 Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 5 page ![]() Product Summary ● VDS 30V ● ID 5.6A ● RDS(ON)( at VGS=10V) <29 mohm ● RDS(ON)( at VGS=4.5V) <40 mohm General Description ● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching Applications ● Battery protection ● Load switch ● Power management ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 30 V Gate-source Voltage VGS ±20 V Drain Current TA=25℃ @ Steady State ID 5.6 A TA=70℃ @ Steady State 4.5 Pulsed Drain Current A IDM 30 A Total Power Dissipation @ TA=25℃ PD 1.2 W Thermal Resistance Junction-to-Ambient @ Steady State B RθJA 104 ℃/ W Junction and Storage Temperature Range TJ ,TSTG -55~+150 ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE LM3404 F2 R4. 3000 7“ reel Enhancement Mode Field Effect Transistor N-Channel LM3404 Rev : www.leiditech.com 01.06.2018 1/5 |
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