BAT48WS datasheet(1/3 Pages) LEIDITECH

No. de pieza	BAT48WS

Descripción Electrónicos	Schottky Barrier Diode

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Fabricante Electrónico	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

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SOD-323

FEATURES

Low Forward Voltage Drop

Guard Ring Construction for Transient Protection

Negligible Reverse Recovery Time

Low Reverse Capacitance

MARKING:

The marking bar indicates the cathode

Solid dot = Green molding compound device,if none,

the normal device.

Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25

℃

Parameter

Symbol

Unit

Peak Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

40

RMS Reverse Voltage

VR(RMS)

Forward Continuous Current

IFM

350

mA

epetitive Peak Forward

Surge

Current @t

s

IFSM

2.0

A

Power Dissipation

Pd

200

mW

Thermal Resistance Junction to Ambient

RθJA

500

℃/W

Storage Temperature

TSTG

-55~+150

℃

Junction Temperature

Tj

1

25

℃

Electrical Ratings @Ta=25

℃

Parameter

Symbol

Min

Typ

Max

Unit

Conditions

Reverse breakdown voltage

V(BR)

40

V

IR=100μA

R

μ

Forward voltage

VF

0.37

0.60

V

IF=20mA

IF=200mA

Reverse current

IRM

5.0

μA

VR=30V

Capacitance between terminals

CT

50

pF

VR=0V,f=1.0MHz

Reverse recovery time

trr

10

ns

IF=IR=200mA

Irr=0.1XIR,RL=100Ω

V

BAT48WS:D

D

BAT48WS

Schottky Barrier Diode

BAT48WS

28

Rev 2.0 :

www.leiditech.com

12.01.2019

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BAT48WS Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

BAT48WS Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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