MBUS1GS datasheet(1/3 Pages) FS

No. de pieza	MBUS1GS

Descripción Electrónicos	Fast Recovery Diode Bridge Rectifier

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrónico	FS [First Silicon Co., Ltd]

Página de inicio	http://www.firstsilicon.co.kr/

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1 / 3 page

Package outline dimensions in inches (millimeters)

SEMICONDUCTOR

TECHNICAL DATA

MBUS1BS ~ MBUS1MS

2013 10 22

1/3

Revision No : 0

Fast Recovery Diode Bridge Rectifier

■ Features

●

Io

0.8A

●

VRRM

100V~1000V

●

Glass passivated chip

●

High surge forward current capability

■ Applications

●

General purpose 1 phase Bridge

rectifier applications

●

trr

50ns

■ Limiting Values（Absolute Maximum Rating）

MBUS1

Item

Symbol Unit

Conditions

BS

DS

GS

JS

KS

MS

Repetitive Peak Reverse

Voltage

VRRM

V

100

200

400

600

800

1000

On alumina substrate

0.8

Average Rectified Output

Current

IO

A

60Hz sine wave,

R-load, Ta=25℃

On glass-epoxi substrate

0.5

Surge(Non-

repetitive)Forward Current

IFSM

A

60HZ sine wave, 1 cycle, Tj=25℃

30

Current Squared Time

I

2t

A

2S

1ms≤t<8.3ms Tj=25℃，Rating of per diode

3.7

Storage Temperature

Tstg

℃

-55 ~+150

Junction Temperature

Tj

℃

-55 ~+125

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MBUS1GS Datasheet(PDF) 1 Page - First Silicon Co., Ltd

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