FTK4438 datasheet(2/4 Pages) FS

2 / 4 page

FTK4438

2013. 01. 02

2/4

Revision No : 0

Electrical characteristics (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

STATIC PARAMETERS

Drain-source breakdown voltage

V (BR)DSS

VGS = 0V, ID =250µA

Zero gate voltage drain current

IDSS

VDS =60V,VGS = 0V

µA

Gate-body leakage current

IGSS

VGS =±20V, VDS = 0V

±100

Gate threshold voltage

VGS(th)

VDS =VGS, ID =250µA

VGS =10V, ID =8.2A

mΩ

Drain-source on-resistance (note 3)

RDS(on)

VGS =4.5V, ID =7.6A

mΩ

Forward tranconductance (note 3)

gfs

VDS =5V, ID =8.2A

Diode forward voltage (note 3)

VSD

IS=1A, VGS = 0V

DYNAMIC PARAMETERS (note 4)

Input Capacitance

Ciss

2300

Output Capacitance

Coss

155

Reverse Transfer Capacitance

Crss

VDS =30V,VGS =0V,f =1MHz

116

SWITCHING PARAMETERS (note 4)

Turn-on delay time

td(on)

8.2

Turn-on rise time

5.5

Turn-off delay time

td(off)

29.7

Turn-off fall time

VGS=10V,VDS=30V

RL=3.6Ω,RGEN=3Ω

5.2

Total Gate Charge (10V)

Total Gate Charge (4.5V)

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS =30V,VGS =10V,ID =8.2A

14.4

Notes :

1. The value of RθJA is measured with the device mounted on 1 in2 FR4 board with 2oz. Copper, in a still air environment with

Ta=25

℃.The value in any given application depends on the user’s specific board design. The current rating is based on

the t ≤10s thermal resistance rating.

2. Repetitive rating : Pulse width limited by junction temperature.

3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤2%.

4. These parameters have no way to verify.

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