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TPD5030 Datasheet(PDF) 2 Page - Silicon Supplies

No. de pieza TPD5030
Descripción Electrónicos  ESD Protection Diode
PDF  3 Pages
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Fabricante Electrónico  SS [Silicon Supplies]
Página de inicio  https://siliconsupplies.com/
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TPD5030 Datasheet(HTML) 2 Page - Silicon Supplies

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ESD Protection Diode – TPD5030
Absolute Maximum Ratings1 T
J = 25°C unless otherwise stated
Rev 1.0
29/11/20
PARAMETER
SYMBOL
VALUE
UNIT
Peak Pulse Power (tp = 8/20 µs)
PPK
140
W
Peak Pulse Current (tp = 8/20 µs)
11
Peak Pulse Current (tp = 5/50 ns)
IPP
40
A
Operating Junction temperature
TJ
-55 to 175
°C
Storage Temperature Range
TSTG
-65 to 200
°C
1. Operation above the absolute maximum rating may cause device failure. Operation at the absolute maximum ratings, for extended periods, may
reduce device reliability.
ESD Rating Compliant to IEC 61000-4-2
PARAMETER
SYMBOL
VALUE
UNIT
Air
±30
kV
Contact
VESD
±30
kV
Electrical Characteristics T
J = 25°C unless otherwise stated
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Reverse Stand-Off Voltage
VRWM
-
-
5
V
Reverse Breakdown Voltage
VBR
IT = 1mA
6.5
-
8.5
V
Reverse Leakage
IR
VRWM = 5V
-
2
150
nA
IPP = 5A, tp = 8/20 µs
-
-
9.7
Clamping Voltage
VC
IPP = 11A, tp = 8/20 µs
-
-
13.6
V
VR = 0V, f = 1MHz
-
25
40
Junction Capacitance
CJ
VR = 2.5V, f = 1MHz
-
20
30
pF
Reverse Dynamic Resistance
RDYN, REV
-
0.55
-
Forward Dynamic Resistance
IPP > 2A
-
-
Ω
RDYN, FWD
0.35
FIGURE 1. Bidirectional Configuration
FIGURE 2. Peak Pulse Current Versus Time
Page 2 of 3
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