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NJW0302GD Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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NJW0302GD Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor NJW0302GD DESCRIPTION · High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -350V(Min) · Good Linearity of hFE · Complement to Type NJW0281GD · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -350 V VCEO Collector-Emitter Voltage -350 V VEBO Emitter-Base Voltage -5 V ICM Collector Current-Continuous -23 A IB Base Current-Continuous -1.5 A PC Collector Power Dissipation @ TC=25℃ 120 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ |
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