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STM32G47PBY3TR Datasheet(PDF) 191 Page - STMicroelectronics

No. de pieza STM32G47PBY3TR
Descripción Electrónicos  Arm® Cortex®-M4 32-bit MCUFPU, up to 512 KB Flash, 170 MHz / 213DMIPS, 128 KB SRAM, rich analog, math accelerator
PDF  229 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32G47PBY3TR Datasheet(HTML) 191 Page - STMicroelectronics

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DS12712 Rev 3
191/229
STM32G473xB STM32G473xC STM32G473xE
Electrical characteristics
194
Figure 51. NAND controller waveforms for common memory write access
Table 101. Switching characteristics for NAND Flash read cycles(1)(2)
1. CL = 30 pF.
2. Guaranteed by characterization results.
Symbol
Parameter
Min
Max
Unit
Tw(N0E)
FMC_NOE low width
4 THCLK - 1
4 THCLK
ns
Tsu(D-NOE)
FMC_D[15-0] valid data before FMC_NOE high
19
-
Th(NOE-D)
FMC_D[15-0] valid data after FMC_NOE high
0
-
Td(NCE-NOE) FMC_NCE valid before FMC_NOE low
-
3 THCLK
Th(NOE-ALE)
FMC_NOE high to FMC_ALE invalid
3 THCLK
-
Table 102. Switching characteristics for NAND Flash write cycles(1)(2)
1. CL = 30 pF.
2. Guaranteed by characterization results.
Symbol
Parameter
Min
Max
Unit
Tw(NWE)
FMC_NWE low width
4 THCLK -1
4 THCLK
ns
Tv(NWE-D)
FMC_NWE low to FMC_D[15-0] valid
0
-
Th(NWE-D)
FMC_NWE high to FMC_D[15-0] invalid
3 THCLK - 1
-
Td(D-NWE)
FMC_D[15-0] valid before FMC_NWE high
5 THCLK
-
Td(NCE_NWE)
FMC_NCE valid before FMC_NWE low
-
3 THCLK
Th(NWE-ALE)
FMC_NWE high to FMC_ALE invalid
3 THCLK
-
MSv38006V1
tw(NWE)
th(NWE-D)
tv(NWE-D)
FMC_NWE
FMC_NOE
FMC_D[15:0]
td(D-NWE)
ALE (FMC_A17)
CLE (FMC_A16)
FMC_NCEx
td(NCE-NWE)
th(NOE-ALE)



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