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STM32G47PBY3TR Datasheet(PDF) 103 Page - STMicroelectronics

No. de pieza STM32G47PBY3TR
Descripción Electrónicos  Arm® Cortex®-M4 32-bit MCUFPU, up to 512 KB Flash, 170 MHz / 213DMIPS, 128 KB SRAM, rich analog, math accelerator
PDF  229 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32G47PBY3TR Datasheet(HTML) 103 Page - STMicroelectronics

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background image
IDD (wakeup
from Standby)
Supply current during wakeup
from Standby mode
Wakeup
clock is
HSI16 =
16 MHz(5)
3 V
2.46
-
-
-
-
---
-
-
mA
1. Guaranteed by characterization results, unless otherwise specified.
2. Guaranteed by test in production
3. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
4. The supply current in Standby with SRAM2 mode is:
IDD_ALL(Standby) + IDD_ALL(SRAM2). The supply current in Standby with RTC with SRAM2 mode is:
I
IDD_ALL(Standby + RTC) + IDD_ALL(SRAM2).
5. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 36: Low-power mode wakeup timings.
Table 32. Current consumption in Standby mode (continued)
Symbol
Parameter
Conditions
TYP
MAX(1)
Unit
-
VDD
25°C
55°C
85°C 105°C 125°C 25°C 55°C 85°C 105°C
125°C
Table 33. Current consumption in Shutdown mode
Symbol
Parameter
Conditions
TYP
MAX(1)
Unit
-
VDD
25°C
55°C
85°C
105°C
125°C
25°C
55°C
85°C
105°C
125°C
IDD
(Shutdown)
Supply current
in Shutdown
mode (backup
registers
retained) RTC
disabled
-
1.8 V
19
140
885
2500
6600
78.0
490
3100
8100
24000
nA
2.4 V
28
180
1050
2950
7800
94.0
570
3600
9300
27000
3 V
43
230
1300
3600
9300
130
680
4100
11000
31000
3.6 V
87
360
1750
4700
12000
190
870
4900
13000
35000



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