2SC4606 datasheet(1/3 Pages) PANASONIC

No. de pieza	2SC4606

Descripción Electrónicos	Silicon PNP epitaxial planer type

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Fabricante Electrónico	PANASONIC [Panasonic Semiconductor]

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1

Transistor

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Base

2:Collector

EIAJ:SC–71

3:Emitter

M Type Mold Package

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

*

Tj

Tstg

Ratings

–80

–5

–1

– 0.5

1

150

–55 ~ +150

Unit

V

A

W

˚C

s Electrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

ICBO

VCBO

VCEO

VEBO

hFE1

*

hFE2

VCE(sat)

VBE(sat)

fT

Cob

Conditions

VCB = –20V, IE = 0

IC = –10µA, IE = 0

IC = –100µA, IB = 0

IE = –10µA, IC = 0

VCE = –10V, IC = –150mA

VCE = –5V, IC = –500mA

IC = –300mA, IB = –30mA

VCB = –10V, IE = 50mA, f = 200MHz

VCB = –10V, IE = 0, f = 1 MHz

min

–80

–5

130

50

typ

100

– 0.2

– 0.85

85

11

max

– 0.1

330

– 0.4

–1.2

20

Unit

µA

V

MHz

pF

6.9

±0.1

0.55

±0.1

0.45

±0.05

2.5

±0.1

1.0

1.5

1.5 R0.9

R0.9

0.85

2.5

1

2

3

* Printed circuit board: Copper foil area of 1cm2 or more, and the board

thickness of 1.7mm for the collector portion

*h

FE1 Rank classification

Rank

R

S

hFE1

130 ~ 220

185 ~ 330

2SA1762

Silicon PNP epitaxial planer type

For low-frequency driver amplification

Complementary to 2SC4606

s Features

q

High collector to emitter voltage VCEO.

q

Optimum for the driver stage of a low-frequency and 25 to 30W

output amplifier.

s Absolute Maximum Ratings (Ta=25˚C)

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2SC4606 Datasheet(PDF) 1 Page - Panasonic Semiconductor

2SC4606 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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