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3DA27C Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza 3DA27C
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

3DA27C Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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isc Silicon NPN Power Transistor
3DA27C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 1mA; IB= 0
200
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA; IB= 0
180
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 2.5A; IB= 0.25A
1
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.25A
1.5
V
ICBO
Collector Cutoff Current
VCB= 24V; IE= 0
0.5
mA
ICEO
Collector Cutoff Current
VCE= 24V; IE= 0
1
mA
hFE
DC Current Gain
IC=1.5A; VCE= 5V
40
150
NOTICE:
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.



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