Low Noise Amplifier,

0.4 GHz to 11 GHz

Data Sheet

HMC8412

Rev. 0

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FEATURES

Low noise figure: 1.4 dB typical

Single positive supply (self biased)

High gain: ≤15.5 dB typical

High OIP3: ≤33 dBm typical

RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP

APPLICATIONS

Test instrumentation

Telecommunications

Military radar and communication

Electronic warfare

Aerospace

FUNCTIONAL BLOCK DIAGRAM

2

1

3

6

5

4

GND

GND

HMC8412

Figure 1.

GENERAL DESCRIPTION

The HMC8412 is a gallium arsenide (GaAs), monolithic

microwave integrated circuit (MMIC), pseudomorphic high

electron mobility transistor (pHEMT), low noise wideband

amplifier that operates from 0.4 GHz to 11 GHz.

The HMC8412 provides a typical gain of 15.5 dB, a 1.4 dB typical

noise figure, and a typical output third-order intercept (OIP3) of

≤33 dBm, requiring only 60 mA from a 5 V drain supply voltage.

the low noise amplifier (LNA) to function as a local oscillator

(LO) driver for many Analog Devices, Inc., balanced, inphase

and quadrature (I/Q) or image rejection mixers.

The HMC8412 also features inputs and outputs that are

internally matched to 50 Ω, making the device ideal for surface-

mount technology (SMT)-based, high capacity microwave radio

applications.

The HMC8412 is housed in an RoHS-compliant, 2 mm ×

2 mm, 6-lead LFCSP.