BDX53F

BDX54F

COMPLEMENTARY SILICON POWER

DARLINGTON TRANSISTORS

s

STMicroelectronics PREFERRED

SALESTYPES

s

COMPLEMENTARY PNP - NPN DEVICES

s

MONOLITHIC DARLINGTON

CONFIGURATION

s

INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

APPLICATIONS

s

LINEAR AND SWITCHING INDUSTRIAL

EQUIPMENT

DESCRIPTION

T

he BDX53F

is a silicon Epitaxial-Base NPN

power

transistor

in

monolithic

Darlington

configuration, mounted in Jedec TO-220 plastic

package. It is intented for use in power linear and

switching applications. The complementary PNP

type is BDX54F.

INTERNAL SCHEMATIC DIAGRAM

October 2003

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

NPN

BDX53F

PNP

BDX54F

160

V

160

V

5

V

Collector Current

8

A

Collector Peak Current

12

A

Base Current

0.2

A

60

W

Storage Temperature

-65 to 150

Max. Operating Junction Temperature

150

For PNP types voltage and current values are negative.

1

2

3

TO-220

Ω

Ω

®

1/4