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FEP30GP Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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FEP30GP Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 Fast Recovery Rectifier FEP30GP FEATURES · Fast switching for high efficiency · Low forward voltage drop · High current capability · Low reverse leakage current · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Switching power supply · Power switching circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 400 V IF(AV) Maximum average forward rectified current at TC = 100℃ 30 A IFSM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half- wave, single phase, 60Hz) 300 A PD Maximum power dissipation 125 W TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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