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2SB1259 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SB1259
Descripción Electrónicos  isc Silicon PNP Darlington Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB1259 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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1
isc Silicon PNP Darlington Power Transistor
2SB1259
DESCRIPTION
·
High DC Current Gain-
: hFE= 2000(Min)@IC= -5A
·
Low-Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max.)@IC= -5A
·
Complement to Type 2SD2081
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for audio, series regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-10
A
IB
Base Current- Continuous
-1
A
PC
Collector Power Dissipation
@ TC=25℃
30
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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