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AS7C33512PFD18A-166TQI Datasheet(PDF) 8 Page - Alliance Semiconductor Corporation

No. de pieza AS7C33512PFD18A-166TQI
Descripción Electrónicos  3.3V 512K x 18 pipeline burst synchronous SRAM
PDF  20 Pages
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Fabricante Electrónico  ALSC [Alliance Semiconductor Corporation]
Página de inicio  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS7C33512PFD18A-166TQI Datasheet(HTML) 8 Page - Alliance Semiconductor Corporation

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®
AS7C33512PFD18A
12/1/04; v.1.3
Alliance Semiconductor
8 of 20
Recommended operating conditions at 3.3V I/O
Recommended operating conditions at 2.5V I/O
Absolute maximum ratings1
1 Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions may affect reliability.
Parameter
Symbol
Min
Max
Unit
Power supply voltage relative to GND
VDD, VDDQ
–0.5
+4.6
V
Input voltage relative to GND (input pins)
VIN
–0.5
VDD + 0.5
V
Input voltage relative to GND (I/O pins)
VIN
–0.5
VDDQ + 0.5
V
Power dissipation
PD
–1.8
W
DC output current
IOUT
–50
mA
Storage temperature (plastic)
Tstg
–65
+150
°C
Temperature under bias
Tbias
–65
+135
°C
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
VDD
3.135
3.3
3.465
V
Supply voltage for I/O
VDDQ
3.135
3.3
3.465
V
Ground supply
Vss
0
0
0
V
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
VDD
3.135
3.3
3.465
V
Supply voltage for I/O
VDDQ
2.375
2.5
2.625
V
Ground supply
Vss
0
0
0
V



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