SXF6521 datasheet(1/2 Pages) GETEDZ

No. de pieza	SXF6521

Descripción Electrónicos	High Voltage Surface Mount Diodes

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Fabricante Electrónico	GETEDZ [GETAI ELECTRONICS DEVICE CO., LTD]

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SXF6521 500mA 2.0kV 75nS

High Voltage Surface Mount Diodes

----------------------------------------------------------------------------------------------------------------------------- -------

GETE ELECTRONIC CO.,LTD

Http://www.getedz.com

Http://www.hvgtsemi.com E-mai: sales@getedz.com

GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628

FAX:0086-20-8184 9638

2020-08 1 / 2

INTRODUCE:

HVGT high voltage silicon rectifier diodes is made

of high quality silicon wafer chip and high

reliability epoxy resin sealing structure, and

through professional testing equipment inspection

qualified after to customers.

FEATURES:

1. High reliability design.

2. Fast recovery time.

3. SMT.

4. Conform to RoHS and SGS.

5. Epoxy resin molded in vacuumHave

anticorrosion in the surface.

APPLICATIONS:

1. Detecting equipment.

2. General purpose high voltage rectifier. .

3. Rectification for X-ray generator high voltage

power supply.

MECHANICAL DATA:

1. Case: epoxy resin molding.

2. Terminal: welding axis.

3. Net weight: 0.09 grams (approx).

SHAPE DISPLAY:

SIZE: (Unit:mm)

HVGT NAME: SMA-J

MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)

Items

Symbols

Condition

Data Value

Units

Repetitive Peak Renerse Voltage

VRRM

TA=25°C

2.0

kV

Non-Repetitive Peak Renerse Voltage

VRSM

TA=25°C

--

kV

Average Forward Current Maximum

IFAVM

TA=55°C

500

mA

TOIL=100°C

250

mA

Non-Repetitive Forward Surge Current

IFSM

TA=25°C; 60Hz Half-Sine Wave; 8.3mS

25

A

Junction Temperature

TJ

150

°C

Allowable Operation Case Temperature

Tc

-40~+150

°C

Storage Temperature

TSTG

-40~+150

°C

ELECTRICAL CHARACTERISTICS: TA=25°C (Unless Otherwise Specified)

Items

Symbols

Condition

Data value

Units

Maximum Forward Voltage Drop

VFM

at 25°C; at IFAVM

5.0

V

Maximum Reverse Current

IR1

at 25°C; at VRRM

0.5

uA

IR2

at 100°C; at VRRM

20

uA

Maximum Reverse Recovery Time

TRR

at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR

75

nS

Junction Capacitance

CJ

at 25°C; VR=0V; f=1MHz

8.0

pF

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SXF6521 Datasheet(PDF) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD

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