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IS25LP032D-RKLA3 Datasheet(PDF) 98 Page - Integrated Silicon Solution, Inc

No. de pieza IS25LP032D-RKLA3
Descripción Electrónicos  SERIAL FLASH MEMORY WITH 133MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE
PDF  118 Pages
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Fabricante Electrónico  ISSI [Integrated Silicon Solution, Inc]
Página de inicio  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS25LP032D-RKLA3 Datasheet(HTML) 98 Page - Integrated Silicon Solution, Inc

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IS25LP032D
IS25WP032D
Integrated Silicon Solution, Inc.- www.issi.com
98
Rev. A12
08/04/2020
AUTOBOOT REGISTER WRITE OPERATION (WRABR, 15h)
Before the WRABR command can be accepted, a Write Enable (WREN) command must be issued and decoded
by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations.
The WRABR command is entered by shifting the instruction and the data bytes, least significant byte first, most
significant bit of each byte first. The WRABR data is 32 bits in length.
CE# must be driven high after the 32nd bit of data has been latched. If not, the WRABR command is not executed.
As soon as CE# is driven high, the WRABR operation is initiated. While the WRABR operation is in progress, Status
Register may be read to check the value of the Write-In Progress (WIP) bit. The WIP bit is
“1” during the WRABR
operation, and is a 0 when it is completed. When the WRABR cycle is completed, the WEL is set to
“0”.
Figure 8.78 WRABR Sequence In SPI Mode
Instruction = 15h
7
CE #
SCK
SI
3
2
SO
1
0
Data In 1
6
5
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Mode 3
Mode 0
4
High Impedance
...
...
Figure 8.79 WRABR Sequence In QPI Mode
15h
0
1
Mode 3
Mode 0
2
3
7:4
3:0
CE#
SCK
IO[3:0]
Data In 1
...
...



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