EPC2045 datasheet(1/6 Pages) EPC-CO

No. de pieza	EPC2045

Descripción Electrónicos	Enhancement Mode Power Transistor

PDF	6 Pages

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Fabricante Electrónico	EPC-CO [Efficient Power Conversion Corporation.]

Página de inicio	https://epc-co.com/

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eGaN® FET DATASHEET

EPC2045

| 1

Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very

low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG

and zero QRR. The end result is a device that can handle tasks where very high switching frequency,

and low on-time are beneficial as well as those where on-state losses dominate.

EPC2045 eGaN® FETs are supplied

passivated die form with solder bumps

Die size: 2.5 mm x 1.5 mm

Applications

• Open Rack Server Architectures

• Lidar/Pulsed Power Applications

• USB-C

• Isolated Power Supplies

• Point of Load Converters

• Class D Audio

• LED Lighting

• Low Inductance Motor Drive

Benefits

• Ultra High Efficiency

• No Reverse Recovery

• Ultra Low QG

• Ultra Small Footprint

EFFICIENT POWER CONVERSION

HAL

EPC2045 – Enhancement Mode Power Transistor

VDS , 100V

RDS(on) , 7 mΩ

ID , 16 A

G

D

S

Maximum Ratings

PARAMETER

VALUE

UNIT

VDS

Drain-to-Source Voltage (Continuous)

100

V

Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C)

120

ID

Continuous (TA = 25°C)

16

A

Pulsed (25°C, TPULSE = 300 µs)

130

VGS

Gate-to-Source Voltage

6

V

Gate-to-Source Voltage

-4

TJ

Operating Temperature

-40 to 150

°C

TSTG Storage Temperature

-40 to 150

Thermal Characteristics

PARAMETER

TYP

UNIT

RθJC

Thermal Resistance, Junction-to-Case

1.4

°C/W

RθJB

Thermal Resistance, Junction-to-Board

8.5

RθJA

Thermal Resistance, Junction-to-Ambient (Note 1)

64

Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.

See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.

# Defined by design. Not subject to production test.

Static Characteristics (TJ = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

BVDSS

Drain-to-Source Voltage

VGS = 0 V, ID = 300 μA

100

V

IDSS

Drain-Source Leakage

VGS = 0 V, VDS = 80 V

40

250

µA

IGSS

Gate-to-Source Forward Leakage

VGS = 5 V, TJ = 25°C

0.01

0.25

mA

Gate-to-Source Forward Leakage#

VGS = 5 V, TJ = 125°C

0.1

5

mA

Gate-to-Source Reverse Leakage

VGS = -4 V

40

500

µA

VGS(TH)

Gate Threshold Voltage

VDS = VGS, ID = 5 mA

0.8

1.4

2.5

V

RDS(on)

Drain-Source On Resistance

VGS = 5 V, ID = 16 A

5.6

7

mΩ

VSD

Source-Drain Forward Voltage

IS = 0.5 A, VGS = 0 V

1.7

V

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