LPW5213 datasheet(4/5 Pages) POWER

4 / 5 page

LPW5213-00

May.-2018

Email: marketing@lowpowersemi.com

www.lowpowersemi.com

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Preliminary Datasheet

LPW5213

Application Information

The LPW5213 are single N-Channel MOSFET

high-side power switches with active-high enable

input, optimized for self-powered and bus-powered

Universal Serial Bus applications. The LPW5209

equipped with a charge pump circuitry to drive the

internal NMOS switch; the switch's low RDS(ON)

80mΩ.

Input and Output

VIN (input) is the power source connection to the

internal circuitry and the drain of the MOSFET.

VOUT (output) is the source of the MOSFET. In a

typical application, current flows through the switch

from VIN to VOUT toward the load. If VOUT is

greater than VIN, current will flow from VOUT to VIN

since the MOSFET is bidirectional when on. Unlike

a normal MOSFET, there is no a parasitic body

diode between drain and source of the MOSFET,

the LPW5213 prevents reverse current flow if VOUT

being externally forced to a higher voltage than VIN

when the output disabled (VEN < 0.4V).

Chip Enable Input

The switch will be disabled when the EN pin is in a

logic low condition. During this condition, the

internal circuit is turned off, reducing the supply

current to 0.1μA typical. The maximum guaranteed

voltage for a logic low at the EN pin is 0.4V. A

minimum guaranteed voltage of 1.4V at the EN pin

will turn the LPW5213 back on. Floating the input

may cause unpredictable operation. EN should not

be allowed to go negative with respect to GND. The

EN pin may be directly tied to VIN to keep the part

on.

Thermal Shutdown

Thermal shutdown is employed to protect the device

from damage if the die temperature exceeds

approximately 150°C. If enabled, the switch

automatically restarts when the die temperature falls

20°C. The output will continue to cycle on and off

until the device is disabled or the fault is removed.

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