MPSA94SQ datasheet(2/4 Pages) PJSEMI

No. de pieza	MPSA94SQ

Descripción Electrónicos	PNP Silicon Expitaxial Planar Transistor

PDF	4 Pages

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Fabricante Electrónico	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

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MPSA94SQ

PNP Silicon Expitaxial Planar Transistor

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www.pingjingsemi.com

Revision:1.0 May-2018

Electrical Characteristics(Ta=25℃)

Parameter

Symbol

Min.

Max.

Units

DC Current Gain

at -IC = 1 mA, -VCE = 10 V

at -IC = 10 mA, -VCE = 10 V

at -IC = 50 mA, -VCE = 10 V

at -IC = 100 mA, -VCE = 10 V

hFE

300

Collector Base Cutoff Current

at -VCB = 300 V

-I

CBO

0.1

µA

Emitter Base Cutoff Current

at -VEB = 4 V

-I

EBO

0.1

µA

Collector Emitter Cutoff Current

at -VCE = 400 V

-I

CES

µA

Collector Base Breakdown Voltage

at -IC = 100 µA

-V

(BR)CBO

400

Collector Emitter Breakdown Voltage

at -IC = 1 mA

-V

(BR)CEO

400

Emitter Base Breakdown Voltage

at -IE = 100 µA

-V

(BR)EBO

Collector Emitter Saturation Voltage

at -IC = 10 mA, -IB = 1 mA

at -IC = 50 mA, -IB = 5 mA

-V

CE(sat)

0.2

0.5

Base Emitter Saturation Voltage

at -IC = 10 mA, -IB = 1 mA

-V

BE(sat)

0.75

Collector Output Capacitance

at -VCB = 20 V, f = 1 MHz

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