FMMT591 datasheet(2/4 Pages) PJSEMI

No. de pieza	FMMT591

Descripción Electrónicos	PNP Transistor

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Fabricante Electrónico	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

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FMMT591

PNP Transistor

Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain note1

at -VCE = 5 V, -IC = 1 mA

at -VCE = 5 V, -IC = 500 mA

at -VCE = 5 V, -IC = 1 A

at -VCE = 5 V, -IC = 2 A

HFE

100

300

Collector Base Cutoff Current

at -VCB = 60 V

-ICBO

100

Emitter Base Cutoff Current

at -VEB = 5.6 V

-IEBO

100

Collector Base Breakdown Voltage

at -IC = 100 μA

V(BR)CBO

Collector Emitter Breakdown Voltage

at -IC = 10 mA

V(BR)CEO

Emitter Base Breakdown Voltage

at -IE = 100 μA

V(BR)EBO

Collector Emitter Saturation Voltage note1

at -IC = 500 mA, -IB = 50 mA

at -IC =1 A, -IB = 100 mA

VCE(sat)

300

Base Emitter Saturation Voltage note1

at -IC = 1 A, -IB = 100 mA

VBE(sat)

1.2

Base Emitter Voltage note1

at -VCE = 5 V, -IC = 1 A

VBE(on)

Transition Frequency

at -VCE = 10 V, -IC = 50 mA, f= 100MHz

150

MHz

600

Collector Output Capacitance

at -VCB = 10 V, f= 1MHz

Cob

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Revision：1.0 Feb-2019

Note1: Measured under pulsed condition, Pulse width ≤ 300uS, Duty cycle2%.

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