FMMT491 datasheet(2/4 Pages) PJSEMI

No. de pieza	FMMT491

Descripción Electrónicos	NPN Transistor

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Fabricante Electrónico	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

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FMMT491

NPN Transistor

Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain Note1

at VCE = 5 V, IC = 1 mA

at VCE = 5 V, IC = 500 mA

at VCE = 5 V, IC = 1 A

at VCE = 5 V, IC = 2 A

HFE

100

300

Collector Base Cutoff Current

at VCB = 60 V

ICBO

100

Emitter Base Cutoff Current

at VEB = 5.6 V

IEBO

100

Collector Base Breakdown Voltage

at IC = 100 μA

V(BR)CBO

Collector Emitter Breakdown Voltage

at IC = 10 mA

V(BR)CEO

Emitter Base Breakdown Voltage

at IE = 100 μA

V(BR)EBO

Collector Emitter Saturation Voltage note1

at IC = 500 mA, IB = 50 mA

at IC =1 A, IB = 100 mA

VCE(sat)

250

Base Emitter Saturation Voltage note1

at IC = 1 A, IB = 100 mA

VBE(sat)

1.1

Base Emitter Voltage note1

at VCE = 5 V, IC = 1 A

VBE(on)

Transition Frequency

at VCE = 10 V, IC = 50 mA, f= 100MHz

150

MHz

500

Collector Output Capacitance

at VCB = 10 V, f= 1MHz

Cob

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Revision：1.0 Feb-2019

Note1: Measured under pulsed conditions, Pulse width≤300uS, Duty cycle≤2%.

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