2SC4373SQ datasheet(1/3 Pages) PJSEMI

No. de pieza	2SC4373SQ

Descripción Electrónicos	NPN Transistor

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Fabricante Electrónico	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

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Absolute Maximum Ratings (Ta = 25℃)

Parameter

Symbol

Value

Unit

Collector Base Voltage

VCBO

120

V

Collector Emitter Voltage

VCEO

120

V

Emitter Base Voltage

VEBO

5

V

Collector Current - DC

IC

0.8

A

Collector Power Dissipation

PC

0.5

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

- 55 to + 150

℃

Characteristics at Ta = 25℃

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at VCE = 5 V, IC = 100 mA

Current Gain Group

hFE

80

120

-

160

240

-

Collector Base Cutoff Current

at VCB = 120 V

ICBO

-

100

nA

Emitter Base Cutoff Current

at VEB = 5 V

IEBO

-

100

nA

Collector Base Breakdown Voltage

at IC = 0.1 mA

V(BR)CBO

120

-

V

Collector Emitter Breakdown Voltage

at IC = 1 mA

V(BR)CEO

120

-

V

Emitter Base Breakdown Voltage

at IE = 0.1 mA

V(BR)EBO

5

-

V

Collector Emitter Saturation Voltage

at IC = 500mA, IB = 50 mA

VCE(sat)

-

1

V

Transition Frequency

at VCE = 5 V, IC =500 mA

fT

-

120

-

MHz

Output Capacitance

at VCB = 10 V, IE = 0, f = 1 MHz

Cob

-

pF

2SC4373SQ

NPN Transistor

SOT-89

1. Base 2. Collector 3.Emitter

Marking: O:CX

Y:CY

1 / 3

www.pingjingsemi.com

Revison：1.0 Jan-2019

Features

⚫

High voltage

⚫

Excellent hFE characteristics

O

Y

Base Emitter Voltage

at VCE = 5 V, IC = 0.5 A

VBE

-

1

V

30

-

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2SC4373SQ Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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