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2SB772SQ Datasheet(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

No. de pieza 2SB772SQ
Descripción Electrónicos  Silicon PNP Power Transistor
PDF  2 Pages
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Fabricante Electrónico  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Página de inicio  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

2SB772SQ Datasheet(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

  2SB772SQ Datasheet HTML 1Page - Dongguan Pingjingsemi Technology Co., Ltd, 2SB772SQ Datasheet HTML 2Page - Dongguan Pingjingsemi Technology Co., Ltd,  
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2SB772SQ
Silicon PNP Power Transistor
www.pingjingsemi.com
2 / 2
Revision：1.0 Apr-2018
Electrical Characteristics (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
DC Current Gain
at -VCE = 2 V, -IC = 20 mA
at -VCE = 2 V, -IC = 1 A Current Gain Group
R
Q
P
E
hFE
hFE
hFE
hFE
hFE
30
60
100
160
200
-
-
-
-
-
120
200
320
400
-
-
-
-
-
Collector Base Cutoff Current
at -VCB = 30 V
-ICBO
-
-
1
µA
Emitter Base Cutoff Current
at -VEB = 3 V
-IEBO
-
-
1
µA
Collector Base Breakdown Voltage
at -IC = 1 mA
-V(BR)CBO
40
-
-
V
Collector Emitter Breakdown Voltage
at -IC = 1 mA
-V(BR)CEO
30
-
-
V
Emitter Base Breakdown Voltage
at -IE = 1 mA
-V(BR)EBO
5
-
-
V
Collector Emitter Saturation Voltage at -IC = 2 A, -IB = 200 mA
-VCE(sat)
-
-
0.5
V
Base Emitter Saturation Voltage
at -IC = 2 A, -IB = 200 mA
-VBE(sat)
-
-
2
V
Current Gain Bandwidth Product
at -VCE = 5 V, -IC = 100 mA
fT
-
80
-
MHz
Output Capacitance
at -VCB = 10 V, f = 1 MHz
Cob
-
55
-
pF
Package Outline
SOT-89
Unit :
mm
Ordering Information
Device
Package
Shipping
2SB772SQ
SOT-89
1000PCS



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