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PJM20H02NSC Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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PJM20H02NSC Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 6 page  Parameter Symbol Limit Unit Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 1.5 A Maximum Power Dissipation Note1 PD 1.25 W Operating Junction and Storage Temperature Range TJ,TSTG 150,-55 To 150 ℃ Thermal Resistance,Junction-to-Ambient Note2 RθJA 100 ℃ / W PJM20H02NSC N- Enhancement Mode Field Effect Transistor 1 / 6 1 2 Gate Source 3Drain Applications Synchronous buck converter applications Features VDS = 200V,ID = 1.5A RDS(ON) < 900mΩ @ VGS=4.5V RDS(ON) < 700mΩ @ VGS=10V Super Low Gate Charge Schematic diagram Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Thermal Characteristics www.pingjingsemi.com Revision：1.0 Jun-2019 1. Gate 2.Source 3.Drain SOT-23-3 2 1 3 |
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