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PJM7002NSA Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

No. de pieza PJM7002NSA
Descripción Electrónicos  N-Enhancement Field Effect Transistor
PDF  6 Pages
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Fabricante Electrónico  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Página de inicio  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM7002NSA Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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PJM7002NSA
N-Enhancement Field Effect Transistor
1 /
6
www.pingjingsemi.com
Revison：1.1 Dec-2018
Features
High density cell design for low RDS(ON)
Voltage controlled small signal switching
High saturation current capability
High speed switching
Application
PWM applications
Load switch
Power management
Absolute Maximum Ratings
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current
ID
115
mA
Pulsed Drain Current
IDM
800
mA
Total Power Dissipation
PD
200
mW
Operating Junction Temperature
TJ
150
O
C
Storage Temperature
TSTG
- 55 to + 150
O
C
SOT-23
1
2
Gate
Source
3Drain
Schematic diagram
Thermal Resistance,Junction-to-Ambient Note2
RθJA
625
℃
/
W
Thermal Characteristics
1. Gate 2.Source 3.Drain
Marking: S72


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