PJM10H05NST datasheet(1/5 Pages) PJSEMI

No. de pieza	PJM10H05NST

Descripción Electrónicos	N-MOS

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrónico	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

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General Description：

The PJM10H05NST uses advanced trench technology

and design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications. The package form

is SOT-223, which accords with the RoHS standard.

Features：



RDS(ON) <300mΩ @ VGS=10V（Typ：200mΩ）



VDS=100V, ID=5A



Fully characterized avalanche voltage and current



Excellent package for good heat dissipation

Applications：



Power switching application



Hard switched and high frequency circuits



Uninterruptible power supply

Absolute Rating（Tc= 25℃ unless otherwise specified）：

Symbol

Parameter

Rating

Units

VDSS

Drain-to-Source Voltage

100

V

ID

Continuous Drain Current

5

A

IDM

Pulsed Drain Current

20

A

VGS

Gate-to-Source Voltage

±20

V

PD

Power Dissipation

3

W

EAS

Single pulse avalanche energy5

20

mJ

TJ，Tstg

Operating Junction and Storage Temperature Range

175，–55 to 175

℃

VDSS

100

V

ID

5

A

PD

3

W

RDS(ON)type

200

mΩ

SOT-223

PJM10H05NST

N-MOS

1 /

5

www.pingjingsemi.com

Revis

ion：1.0 Nov-2017

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