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MMST3904 Datasheet(PDF) 2 Page - First Silicon Co., Ltd |
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MMST3904 Datasheet(HTML) 2 Page - First Silicon Co., Ltd |
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2 / 4 page ![]() ■ Electrical Characteristics(Ta=25℃ Unless otherwise specified Item Symbol Unit Conditions Min Max Collector-base breakdown voltage V(BR)CBO V IC=10μA,IE=0 60 Collector-emitter breakdown voltage V(BR)CEO V IC =1mA,IB=0 40 Emitter-base breakdown voltage V(BR)EBO V IE=10μA,IC=0 6 I t n e rr u c ff o -t u c r o t c e ll o C CBO nA VCB=30V,IB=0 100 I t n e rr u c ff o -t u c r o t c e ll o C CEX nA VCE=30V, VEB=3V, 50 DC current gain hFE VCE=1V,IC=100uA 40 hFE VCE=1V,IC=1mA 70 hFE VCE=1V,IC=10mA 100 300 hFE VCE=1V,IC=50mA 60 hFE VCE=1V,IC=500mA 30 Collector-emitter saturation voltage VCE(sat) V IC=50mA,IB=5mA 0.3 Base-emitter saturation voltage VBE(sat)* V IC=50mA,IB=5mA 0.95 ■ Other Characteristics Ta=25℃ Unless otherwise specified Item Symbol Unit Conditions Min Max H M t F y c n e u q e rf n o it i s n a r T z VCE=20V,IC=10mA,f=100MHz 250 s n d t e m it y a l e D VCC=3V,IC=100uA, VBE(off)=0.5V ,IB1=1mA 35 5 3 s n rt e m it e s i R s n s t e m it e g a r o t S VCC=3V,IC=10mA, IB1=-IB2=1mA 200 0 5 s n ft e m it ll a F 2020. 03. 31 2/4 Revision No : 0 MMST3904 |
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