FTD882D datasheet(1/2 Pages) FS

No. de pieza	FTD882D

Descripción Electrónicos	TRANSISTOR

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Fabricante Electrónico	FS [First Silicon Co., Ltd]

Página de inicio	http://www.firstsilicon.co.kr/

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2011. 12. 26

1/2

SEMICONDUCTOR

TECHNICAL DATA

FTD882D

Revision No : 0

FTD882D

TRANSISTOR

FEATURES

Low Speed Switching

MAXIMUM RATINGS (Ta=25

unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current -Continuous

3

A

PC

Collector Power Dissipation(Tc=25℃)

RӨJA

Thermal Resistance, junction to Ambient

100

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

CLASSIFICATION OF hFE

Rank

R

G

Y

O

R

Range

60-120

100-200

160-320

200-400

10

W

D-PAK (TO-252)

DIM

MILLIMETERS

A

B

C

D

F

H

I

J

L

6 50 ± 0 2

5 60 ± 0 2

5 20 ± 0 2

1 50 ± 0 2

2 70 ± 0 2

2 30 ± 0 1

1 00 MAX

2 30 ± 0 2

0 5 ± 0 1

0 50 ± 0 10

E

1 6 ± 0 2

O

A

C

I

J

H

F

L

1

2

3

1 BASE

2 COLLECTOR

3 EMITTER

0 95 MAX

Q

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC = 100

μA, IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC = 10mA, IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 100

μA, IC=0

5

V

Collector cut-off current

ICBO

VCB= 40 V, IE=0

1

µA

Collector cut-off current

ICEO

VCE= 30 V, IB=0

10

µA

Emitter cut-off current

IEBO

VEB= 6 V, IC=0

1

µA

DC current gain

hFE

VCE= 2 V, IC= 1A

60

400

Collector-emitter saturation voltage

VCE (sat)

IC= 2A, IB= 0.2 A

0.5

V

Base-emitter saturation voltage

VBE (sat)

IC= 2A, IB= 0.2 A

1.5

V

Transition frequency

fT

VCE= 5V, IC=0.1A

f =10MHz

90

MHz

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