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2SC5586 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SC5586
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC5586 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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1
isc Silicon NPN Power Transistor
2SC5586
DESCRIPTION
·
High Collector-Base Voltage-
: VCBO= 900V(Min)
·
High Switching Speed
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900
V
VCEO
Collector-Emitter Voltage
550
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
5
A
PC
Collector Power Dissipation
@ TC=25℃
70
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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