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ASD33C Datasheet(PDF) 2 Page - Applied Power Microelectronics Co.,Ltd.

No. de pieza ASD33C
Descripción Electrónicos  1-Line Bi-directional TVS Diode
PDF  7 Pages
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Fabricante Electrónico  APMICRO [Applied Power Microelectronics Co.,Ltd.]
Página de inicio  http://www.appliedpowermicro.com/
Logo APMICRO - Applied Power Microelectronics Co.,Ltd.

ASD33C Datasheet(HTML) 2 Page - Applied Power Microelectronics Co.,Ltd.

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Revision 12/2017
2 of 6
www.appliedpowermicro.com
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Electrical Characteristics (TA=25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Peak Pulse Power (8/20µs)
Ppk
500
W
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
VESD
±30
±30
kV
Operating Temperature Range
TJ
−55 to +125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
ASD33C through ASD40C
ASD33C
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Working Voltage
VRWM
3.3
V
Breakdown Voltage
VBR
3.8
V
IT = 1mA
Reverse Leakage Current
IR
0.2
µA
VRWM = 3.3V
Clamping Voltage
VC
5
V
IPP = 1A (8 x 20µs pulse)
Clamping Voltage
VC
12.5
V
IPP = 40A (8 x 20µs pulse)
Peak Pulse Current
Ipp
40
A
tp = 8/20μs
Junction Capacitance
CJ
200
pF
VR = 0V, f = 1MHz
ASD05C
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Working Voltage
VRWM
5
V
Breakdown Voltage
VBR
6
V
IT = 1mA
Reverse Leakage Current
IR
0.2
µA
VRWM = 5V
Clamping Voltage
VC
9.5
V
IPP = 1A (8 x 20µs pulse)
Clamping Voltage
VC
15
V
IPP = 34A (8 x 20µs pulse)
Peak Pulse Current
Ipp
34
A
tp = 8/20μs
Junction Capacitance
CJ
200
pF
VR = 0V, f = 1MHz



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